Investigation of profiles of the distribution of ion-implanted Mn atoms using the rutherford back scattering method and the influence of thermal annealing on them
Б. Э. ЭгамбердиевTashkent State Technical University, ul. Universitetskaya 2, Tashkent, 700095, UzbekistanБ.Ч. ХоллиевTashkent State Technical University, ul. Universitetskaya 2, Tashkent, 700095, UzbekistanA. S. MallaevTashkent State Technical University, ul. Universitetskaya 2, Tashkent, 700095, Uzbekistan
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This paper presents the results of the RBS method investigation of profiles of the distribution of Mn atoms implanted into Si depending on the irradiation dose and annealing temperature. The thermal annealing influence on the distribution of Mn and other impurities (in particular, oxygen) is studied. The possibility of applying the RBS method for analysis of both the distribution of doping impurities and their interaction is discussed.
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