R. A. Saidova

5 ta ish

Oʻzbekiston Respublikasi Fanlar Akademiyasi

1. Functional possibilities of Ag-N 0AlGaAs-n +GaAs-n 0GaInAs-au structures with an isotype base region

   A. V. Karimov, D. M. Edgorova, F. A. Giyasova +1

   MaqolaSemiconductor materials and interfacesJournal of Engineering Physics and Thermophysics20081 iqtibos

   ABIABI:AkademIndex/2008.article.000339

2. Optimization of carrier concentration distribution across epitaxial layer thickness

   A. V. Karimov, D. M. Yodgorova, F. A. Giyasova +2

   MaqolaSemiconductor Quantum Structures and DevicesSHILAP Revista de lepidopterología20070 iqtibos

   ABIABI:AkademIndex/2007.article.000488

3. Combined method of growing epitaxial layers of A³B⁵ semiconductor compounds

   D. M. Yodgorova, A. V. Karimov, F. A. Giyasova +1

   MaqolaBoron and Carbon Nanomaterials ResearchSHILAP Revista de lepidopterología20070 iqtibos

   ABIABI:AkademIndex/2007.article.000491

4. Optimization of the concentration’s distribution of the carriers on thickness of epitaxial layers

   A. V. Karimov, D. M. Yodgorova, F. A. Giyasova +2

   MaqolaSemiconductor Quantum Structures and DevicesDOAJ (DOAJ: Directory of Open Access Journals)20070 iqtibos

   ABIABI:AkademIndex/2007.article.000494

5. Combined way of cultivation of epitaxial layers of semicon-ductor connections A³B⁵

   D. M. Yodgorova, A. V. Karimov, F. A. Giyasova +1

   MaqolaOAOchiq kirishBoron and Carbon Nanomaterials ResearchDOAJ (DOAJ: Directory of Open Access Journals)20070 iqtibos

   ABIABI:AkademIndex/2007.article.000495