H. Hardtdegen

1 ta ish

Jülich Research Centre

1. In‐situ doping and implantation of GaN layers with Mn

   Zdeněk Sofer, David Sedmidubský, Josef Stejskal +7

   MaqolaGaN-based semiconductor devices and materialsPhysica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics20090 iqtibos

   ABIABI:AkademIndex/2009.article.000176