Deyan He
3 ta ish
Fizika-Texnika Instituti
The effect of oxygen vacancy on switching mechanism of ZnO resistive switching memory
Cong Hu, Qi Wang, Shuai Bai +4
Maqola20173 iqtibosABI
Kashfiyot
Xizmatlar
Ishlab chiquvchilar uchun
3 ta ish
Fizika-Texnika Instituti
Cong Hu, Qi Wang, Shuai Bai +4