Natsuki Yokoyama

1 ta ish

Hitachi (Japan)

1. Dual-Sublattice Modeling and Semi-Atomistic Simulation of Boron Diffusion in 4H-Silicon Carbide

   Kazuhiro Mochizuki, Haruka Shimizu, Natsuki Yokoyama

   Maqola20092 iqtibos

   ABIABI:AkademIndex/2026.other.529583