А. В. Осипов

3 ta ish

Russian Academy of Sciences

1. Effect of Chemical Treatment of a Silicon Surface on the Quality and Structure of Silicon-Carbide Epitaxial Films Synthesized by Atom Substitution

   I. P. Kalinkin, С. А. Кукушкін, А. В. Осипов

   Maqola20184 iqtibos

   ABIABI:AkademIndex/2026.other.380296

2. Thin-film condensation processes

   С. А. Кукушкін, А. В. Осипов

   Maqola19982 iqtibos

   ABIABI:AkademIndex/2026.other.527239

3. Raman Investigation of Different Polytypes in SiC Thin Films Grown by Solid-Gas Phase Epitaxy on Si (111) and 6H-SiC Substrates

   Joanna Wasyluk, T. S. Perova, С. А. Кукушкін +3

   MaqolaOAOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20100 iqtibos

   ABIABI:AkademIndex/2010.article.000022