Muhammad Maqbool
5 ta ish
University of Alabama at Birmingham
<i>Ab initio</i> study of the bandgap engineering of Al1−xGaxN for optoelectronic applications
B. Amin, Iftikhar Ahmad, Muhammad Maqbool +2
MaqolaOchiq kirish20114 iqtibosABIInvestigation of half metallicity in Fe doped CdSe and Co doped CdSe materials
Suneela Arif, B. Amin, Iftikhar Ahmad +4
Maqola20113 iqtibosABIInvestigation of structural and optoelectronic properties of BaThO3
G. Murtaza, Iftikhar Ahmad, B. Amin +5
MaqolaOchiq kirish20102 iqtibosABI