Erlon H. Martins Ferreira

2 ta ish

National Institute of Metrology Quality and Technology

1. Quantifying ion-induced defects and Raman relaxation length in graphene

   Márcia Maria Lucchese, Fernando Stavale, Erlon H. Martins Ferreira +5

   Maqola20104 iqtibos

   ABIABI:AkademIndex/2026.other.237951

2. Quantifying Defects in Graphene via Raman Spectroscopy at Different Excitation Energies

   Luiz Gustavo Cançado, Ado Jório, Erlon H. Martins Ferreira +7

   Maqola20112 iqtibos

   ABIABI:AkademIndex/2026.other.589276