G. N. Violina

1 ta ish

Saint Petersburg State Electrotechnical University

1. A high-temperature radiation-resistant rectifier based on p+-n junctions in 4H-SiC ion-implanted with aluminum

   E. V. Kalinina, V. Kossov, R. R. Yafaev +2

   Maqola20102 iqtibos

   ABIABI:AkademIndex/2026.other.498876