A. I. Nikiforov

1 ta ish

Russian Academy of Sciences

1. Epitaxial growth of Ge nanoislands on Si/Ge heterostructure by ion-assisted MBE method

   Х. Б. Ашуров, Flyura Djurabekova, С. Е. Максимов +3

   MaqolaIon-surface interactions and analysisNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms20110 iqtibos

   ABIABI:AkademIndex/2011.article.000307