Asosiy kontentga oʻtish
AkademIndex

Xizmatlar

Maqola

Epitaxial growth of Ge nanoislands on Si/Ge heterostructure by ion-assisted MBE method

Х. Б. АшуровArivov Institute of Electronics, Uzbek Academy of Science, Tashkent, UzbekistanFlyura DjurabekovaAcademy of Sciences Republic of UzbekistanС. Е. МаксимовArivov Institute of Electronics, Uzbek Academy of Science, Tashkent, UzbekistanA. I. NikiforovRussian Academy of SciencesSadulla Sh. TadjimuratovArivov Institute of Electronics, Uzbek Academy of Science, Tashkent, UzbekistanБ. Л. ОксенгендлерArivov Institute of Electronics, Uzbek Academy of Science, Tashkent, Uzbekistan
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atomsjournal2011en

Ochiq kirish: yoʻq

ABI

Annotatsiya

Annotatsiya mavjud emas.

Mavzular

Ion-surface interactions and analysisSilicon Nanostructures and PhotoluminescenceSemiconductor Quantum Structures and Devices

Identifikatorlar

DOI
10.1016/j.nimb.2011.08.059

Iqtiboslar va manbalar

0 ta iqtibos19 ta foydalanilgan manba