Fei Xue

1 ta ish

The University of Texas at Austin

1. InAs inserted InGaAs buried channel metal-oxide-semiconductor field-effect-transistors with atomic-layer-deposited gate dielectric

   Fei Xue, Han Zhao, Yen‐Ting Chen +3

   Maqola20112 iqtibos

   ABIABI:AkademIndex/2026.other.559405