G. A. Oganesyan
9 ta ish
Physico-Technical Institute
Positron probing of open vacancy volume of phosphorus‐vacancy complexes in float‐zone n‐type silicon irradiated by 0.9‐MeV electrons and by 15‐MeV protons
N.Yu. Arutyunov, V. V. Emtsev, Mohamed Elsayed +4
MaqolaMuon and positron interactions and applicationsPhysica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics20171 iqtibosABIPositron annihilation lifetime in float‐zone n‐type silicon irradiated by fast electrons: a thermally stable vacancy defect
N.Yu. Arutyunov, V. V. Emtsev, R. Krause‐Rehberg +3
MaqolaMuon and positron interactions and applicationsPhysica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics20161 iqtibosABI