Rodrigo T. Doria

1 ta ish

Faculty of Industrial Engineering

1. Surface-Potential-Based Drain Current Analytical Model for Triple-Gate Junctionless Nanowire Transistors

   Renan Trevisoli, Rodrigo T. Doria, Michelly de Souza +3

   MaqolaOAOchiq kirish201212 iqtibos

   ABIABI:AkademIndex/2026.other.228622