Dezheng Yang

4 ta ish

Lanzhou University

1. A Large Magnetoresistance Effect in p–n Junction Devices by the Space‐Charge Effect

   Dezheng Yang, Fangcong Wang, Yang Ren +4

   Maqola20132 iqtibos

   ABIABI:AkademIndex/2026.other.511918

2. Angular dependence of the magnetoresistance effect in a silicon based p–n junction device

   Tao Wang, Mingsu Si, Dezheng Yang +5

   Maqola20142 iqtibos

   ABIABI:AkademIndex/2026.other.511924

3. Magnetoresistance Amplification Effect in Silicon Transistor Device

   Tao Wang, Dezheng Yang, Mingsu Si +3

   Maqola20162 iqtibos

   ABIABI:AkademIndex/2026.other.511925

4. Light-Induced-Magnetoresistance in <i>p-n</i> Junction Device

   Yang Cao, Wenbo Sui, Tao Wang +4

   Maqola20202 iqtibos

   ABIABI:AkademIndex/2026.other.511930