Mario Lanza

5 ta ish

King Abdullah University of Science and Technology

1. Coexistence of Grain‐Boundaries‐Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride

   Chengbin Pan, Yanfeng Ji, Na Xiao +13

   MaqolaOAOchiq kirish20172 iqtibos

   ABIABI:AkademIndex/2026.other.043385

2. Graphene and Related Materials for Resistive Random Access Memories

   Fei Hui, Enric Grustan‐Gutierrez, Shibing Long +4

   MaqolaOAOchiq kirish20172 iqtibos

   ABIABI:AkademIndex/2026.other.043396

3. Electronic synapses made of layered two-dimensional materials

   Yuanyuan Shi, Xianhu Liang, Bin Yuan +8

   Maqola20182 iqtibos

   ABIABI:AkademIndex/2026.other.043441

4. Recommended Methods to Study Resistive Switching Devices

   Mario Lanza, H.‐S. Philip Wong, Eric Pop +51

   MaqolaOAOchiq kirish20182 iqtibos

   ABIABI:AkademIndex/2026.other.043452

5. Wafer‐Scale Memristor Array Based on Aligned Grain Boundaries of 2D Molybdenum Ditelluride for Application to Artificial Synapses

   Jihoon Yang, Aram Yoon, Donghyun Lee +7

   Maqola20232 iqtibos

   ABIABI:AkademIndex/2026.other.084245