P. Prajoon

1 ta ish

Karunya Institute of Technology and Sciences

1. Analysis of nanometer-scale InGaAs/InAs/InGaAs composite channel MOSFETs using high-K dielectrics for high speed applications

   J. Ajayan, D. Nirmal, P. Prajoon +1

   Maqola20172 iqtibos

   ABIABI:AkademIndex/2026.other.559413