Feng Yang

2 ta ish

Georgia Institute of Technology

1. A resistive switching memory device with a negative differential resistance at room temperature

   Mayameen S. Kadhim, Feng Yang, Bai Sun +6

   Maqola20182 iqtibos

   ABIABI:AkademIndex/2026.other.119580

2. Hydrothermal synthesis of Fe3O4 nanoparticles and its application in lithium ion battery

   Shibing Ni, Xinghui Wang, Guo Qing Zhou +4

   Maqola20092 iqtibos

   ABIABI:AkademIndex/2026.other.227512