V. V. Shynkarenko

1 ta ish

V.E. Lashkaryov Institute of Semiconductor Physics

1. Features of the Formation of Ohmic Contacts to n+-InN

   Pavlo Sai, N. V. Safryuk-Romanenko, Dmytro B. But +6

   MaqolaOAOchiq kirishGaN-based semiconductor devices and materialsUkrainian Journal of Physics20190 iqtibos

   ABIABI:AkademIndex/2019.article.001077