Kwang-Won Jo

1 ta ish

The University of Tokyo

1. Impact of SiGe layer thickness in starting substrates on strained Ge-on-insulator pMOSFETs fabricated by Ge condensation method

   Kwang-Won Jo, Wu-Kang Kim, Mitsuru Takenaka +1

   Maqola20194 iqtibos

   ABIABI:AkademIndex/2026.other.278127