Nicolas Émond

1 ta ish

Massachusetts Institute of Technology

1. Metal–insulator transition temperature of boron-doped VO2 thin films grown by reactive pulsed laser deposition

   Thameur Hajlaoui, Nicolas Émond, Christian Quirouette +3

   Maqola20192 iqtibos

   ABIABI:AkademIndex/2026.other.317688