Peide D. Ye

3 ta ish

Purdue University West Lafayette

1. Channel Length Scaling of MoS₂ MOSFETs

   Han Liu, Adam T. Neal, Peide D. Ye

   Maqola20123 iqtibos

   ABIABI:AkademIndex/2026.other.495113

2. The last silicon transistor: Nanosheet devices could be the final evolutionary step for Moore's Law

   Peide D. Ye, T. Ernst, Mukesh Khare

   Maqola20192 iqtibos

   ABIABI:AkademIndex/2026.other.447597

3. Bandgap engineering of two-dimensional semiconductor materials

   Andrey Chaves, Javad G. Azadani, Hussain Alsalman +18

   Maqola20202 iqtibos

   ABIABI:AkademIndex/2026.other.476371