Sh Rakhmatullaev

1 ta ish

Islom Karimov nomidagi Toshkent davlat texnika universiteti

1. Investigation of the transient characteristics of S-diodes based on silicon compensated by vanadium

   Sh. A. Shoyusupov, Sh Rakhmatullaev

   MaqolaOAOchiq kirishAdvanced Signal Processing TechniquesIOP Conference Series Earth and Environmental Science20202 iqtibos

   ABIABI:AkademIndex/2026.other.553885