Б. О. Исаков

1 ta ish

Islom Karimov nomidagi Toshkent davlat texnika universiteti

1. Influence OF Impurity Atoms OF Gallium AND Antimony on the Concentration OF Optically Active Oxygen in the Silicon Lattice

   Б. О. Исаков, B.R. Rakhmonov, S. N. (Sh) Subkhonberdiev

   BoshqaOAOchiq kirishNeliti20200 iqtibos

   ABIABI:AkademIndex/2020.other.000074