G. Kh. Allaerova

1 ta ish

Islom Karimov nomidagi Toshkent davlat texnika universiteti

1. The Effect of Stepwise Postimplantation Annealing on the Composition and Structure of Silicon Surface Layers Implanted with Alkali Metal Ions

   Б. Е. Умирзаков, З. А. Исаханов, G. Kh. Allaerova +1

   MaqolaSemiconductor materials and interfacesTechnical Physics Letters20210 iqtibos

   ABIABI:AkademIndex/2021.article.004233