Tibor Grasser

3 ta ish

Vienna University of Technology

1. Origin of NBTI variability in deeply scaled pFETs

   B. Kaczer, Tibor Grasser, Ph. Roussel +6

   Maqola20103 iqtibos

   ABIABI:AkademIndex/2026.other.536298

2. A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability

   Ben Kaczer, J. Franco, Pieter Weckx +11

   Maqola20183 iqtibos

   ABIABI:AkademIndex/2026.other.573068

3. Transistors based on two-dimensional materials for future integrated circuits

   Saptarshi Das, Amritanand Sebastian, Eric Pop +15

   Maqola20212 iqtibos

   ABIABI:AkademIndex/2026.other.108555