A. Azouaoui

2 ta ish

Sidi Mohamed Ben Abdellah University

1. First-principle investigation of LiSrX (X=P and As) half-Heusler semiconductor compounds

   A. Azouaoui, A. Harbi, M. Moutaabbid +7

   Maqola20222 iqtibos

   ABIABI:AkademIndex/2026.other.483325

2. Influence of pressure on structural stability and physical properties of NaCaZ (Z=N, P and As) half-Heusler semiconductor materials

   A. Azouaoui, A. Harbi, M. Moutaabbid +5

   Maqola20232 iqtibos

   ABIABI:AkademIndex/2026.other.483330