Kalyani D. Kadam

4 ta ish

Oʻzbekiston Milliy Universiteti

1. Improved memory performance of ALD grown HfO2 films by nitrogen doping

   Jamal Aziz, Muhammad Farooq Khan, Daniel Neumaier +9

   Maqola20234 iqtibos

   ABIABI:AkademIndex/2026.other.089793

2. Resistive switching and synaptic properties modifications in gallium-doped zinc oxide memristive devices

   Shilpa S. More, Pratiksha A. Patil, Kalyani D. Kadam +9

   MaqolaOAOchiq kirish20192 iqtibos

   ABIABI:AkademIndex/2026.other.106108

3. Enhanced and Passivated Co-doping Effect of Organic Molecule and Bromine on Graphene/HfO₂/Silicon Metal–Insulator–Semiconductor (MIS) Schottky Junction Solar Cells

   Kalyani D. Kadam, Malik Abdul Rehman, Honggyun Kim +10

   MaqolaNanowire Synthesis and ApplicationsACS Applied Energy Materials20221 iqtibos

   ABIABI:AkademIndex/2022.article.000231

4. Optically Reconfigurable Complementary Logic Gates Enabled by Bipolar Photoresponse in Gallium Selenide Memtransistor

   Shania Rehman, Muhammad Asghar Khan, Honggyun Kim +11

   MaqolaOAOchiq kirishAdvanced Memory and Neural ComputingAdvanced Science20231 iqtibos

   ABIABI:AkademIndex/2023.article.000146