Y. A. Abduganiev

6 ta ish

Islom Karimov nomidagi Toshkent davlat texnika universiteti

1. Magnetic Properties of Silicon Doped with Impurity Atoms of Europium

   Н. Ф. Зикриллаев, G. H. Mavlonov, Levent Trabzon +4

   MaqolaOAOchiq kirishMagnetic properties of thin filmsJournal of Nano- and Electronic Physics20237 iqtibos

   ABIABI:AkademIndex/2023.article.000934

2. Optical Properties of GexSi1 – x Binary Compounds in Silicon

   Н. Ф. Зикриллаев, Habibjon Kushiev, Shahzodbek I. Hamrokulov +1

   MaqolaOAOchiq kirishSemiconductor materials and interfacesJournal of Nano- and Electronic Physics20235 iqtibos

   ABIABI:AkademIndex/2023.article.002005

3. Effect of Compensation Degree and Concentration of Impurity Electroactive Selenium Atoms on Current Auto-Oscillation Parameters in Silicon

   Н. Ф. Зикриллаев, K. S. Ayupov, Manzura M. Shoabdirahimova +4

   MaqolaOAOchiq kirishSilicon and Solar Cell TechnologiesEast European Journal of Physics20234 iqtibos

   ABIABI:AkademIndex/2023.article.001522

4. Ordering of europium magnetic domains in silicon at room temperature

   G. H. Mavlonov, С. Б. Исамов, S. Koveshnikov +4

   MaqolaMagnetic properties of thin filmsIndian Journal of Physics20242 iqtibos

   ABIABI:AkademIndex/2024.article.001379

5. Magnetic Properties of Silicon with Paramagnetic Impurity Atoms

   N. F. Zikrillayev, Г. Х. Мавлонов, Levent Trabzon +4

   MaqolaOAOchiq kirishSemiconductor materials and interfacesEast European Journal of Physics20231 iqtibos

   ABIABI:AkademIndex/2023.article.002927

6. Physical and Magnetic Properties of Silicon Doped with Impurity Germanium Atoms

   N. F. Zikrillayev, F. E. Urakova, A. Toshev +4

   MaqolaOAOchiq kirishSemiconductor materials and interfacesEast European Journal of Physics20250 iqtibos

   ABIABI:AkademIndex/2025.article.003073