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Xizmatlar

N. F. Zikrillayev

17 ta ish

Islom Karimov nomidagi Toshkent davlat texnika universiteti

AkademScholarda batafsil koʻrsatkichlar

  1. Obtaining manganese silicide films on a silicon substrate by the diffusion method

    N. F. Zikrillayev, M. M. Shoabdurahimova, T. Kamilov +4

    MaqolaOchiq kirishSemiconductor materials and interfacesPhysical Sciences and Technology202211 iqtibos
    ABI

  2. Adaptation and optimization of a photovoltaic system for a country house

    N. F. Zikrillayev, K. S. Ayupov, Z. Mamarajabova +3

    MaqolaOchiq kirishPhotovoltaic System Optimization TechniquesE3S Web of Conferences202310 iqtibos
    ABI

  3. Silicon with Clusters of Impurity Atoms as a Novel Material for Photovoltaics

    Б. А. Абдурахманов, M. K. Bakhadirkhanov, H. M. Iliyev +8

    Maqola201410 iqtibos
    ABI

  4. Clusters of impurity nickel atoms and their migration in the crystal lattice of silicon

    B. K. Ismaylov, N. F. Zikrillayev, К. А. Исмайлов +1

    MaqolaOchiq kirishMaterial Science and ThermodynamicsPhysical Sciences and Technology20237 iqtibos
    ABI

  5. STUDY OF THE RESULTS OF DIFFUSION DOPING TECHNIQUE FOR PRODUCING HETEROSTRUCTURES (Si-Ge) USING MICROPROBE ANALYSIS

    Elyor Saitov, N. F. Zikrillayev, B. M. Botirov +4

    MaqolaOchiq kirish20197 iqtibos
    ABI

  6. Physical mechanism of gettering of impurity Ni atom clusters in Si lattice

    B. K. Ismaylov, N. F. Zikrillayev, К. А. Исмайлов +1

    MaqolaOchiq kirish20244 iqtibos
    ABI

  7. New Technological Solution for the Tailoring of Multilayer Silicon-based Systems with Binary Nanoclusters Involving Elements of Groups III and V

    N. F. Zikrillayev, С. Б. Исамов, B. O. Isakov +4

    MaqolaOchiq kirishSilicon Nanostructures and PhotoluminescenceJournal of Nano- and Electronic Physics20232 iqtibos
    ABI

  8. Magnetic Properties of Silicon with Paramagnetic Impurity Atoms

    N. F. Zikrillayev, Г. Х. Мавлонов, Levent Trabzon +4

    MaqolaOchiq kirishSemiconductor materials and interfacesEast European Journal of Physics20231 iqtibos
    ABI

  9. ON HOW TO CALCULATE THE BAND GAP OF SULFUR AND ZINC-DOPED SILICON

    N. F. Zikrillayev, Kh. F. Zikrillayev, B. Isakov +3

    MaqolaMaterial Properties and ApplicationsAustrian Journal of Technical and Natural Sciences20220 iqtibos
    ABI

  10. Joint Diffusion of Gallium and Phosphorus Atoms in Silicon

    N. F. Zikrillayev, С. Б. Исамов, S. Koveshnikov +2

    MaqolaOchiq kirish20220 iqtibos
    ABI

  11. Increasing the Efficiency of Silicon Solar Elements by Doping with Nickel

    Zoir Kenjayev, N. F. Zikrillayev, K. S. Ayupov +3

    MaqolaOchiq kirish20230 iqtibos
    ABI

  12. Silicon with Binary Compounds GexSi1-x

    N. F. Zikrillayev, K. S. Ayupov, N. Narkulov +3

    MaqolaOchiq kirish20240 iqtibos
    ABI

  13. Physical and Magnetic Properties of Silicon Doped with Impurity Germanium Atoms

    N. F. Zikrillayev, F. E. Urakova, A. Toshev +4

    MaqolaOchiq kirishSemiconductor materials and interfacesEast European Journal of Physics20250 iqtibos
    ABI

  14. Investigation of the Influence of Nickel on the Behavior of Thermal Donors in Silicon

    B. K. Ismaylov, N. F. Zikrillayev, Kanatbay A. Ismailov +2

    MaqolaOchiq kirishSilicon and Solar Cell TechnologiesEast European Journal of Physics20250 iqtibos
    ABI

  15. Effect of Nickel Diffusion on Trap States and Interface Quality in Polycrystalline Silicon Structures

    Kanatbay A. Ismailov, B. K. Ismaylov, N. F. Zikrillayev +3

    MaqolaOchiq kirishSilicon and Solar Cell TechnologiesEast European Journal of Physics20250 iqtibos
    ABI

  16. Effect of Uniaxial Compression on Excitation Conditions and Parameters of Low-Frequency Auto-Oscillations of Current in Compensated Silicon

    N. F. Zikrillayev, Abdujalol Abdukhamidovich Sattorov, Hayrulla Zikrillaev +6

    MaqolaOchiq kirish20250 iqtibos
    ABI

  17. Effect of inter-impurity interaction on concentration of electroactive manganese impurity atoms in silicon

    N. F. Zikrillayev, К. А. Исмайлов, С. Б. Исамов +4

    MaqolaOchiq kirish20260 iqtibos
    ABI