B. O. Isakov

12 ta ish

Islom Karimov nomidagi Toshkent davlat texnika universiteti

1. A Surface Study of Si Doped Simultaneously with Ga and Sb

   X.M. Iliyev, Sobir B. Isamov, B. O. Isakov +2

   MaqolaOAOchiq kirishSemiconductor Quantum Structures and DevicesEast European Journal of Physics20237 iqtibos

   ABIABI:AkademIndex/2023.article.001190

2. X-Ray Diffraction and Raman Spectroscopy Analyses of GaSb-Enriched Si Surface Formed by Applying Diffusion Doping Technique

   Xalmurat M. Iliyev, В. Б. Оджаев, Sobir B. Isamov +5

   MaqolaOAOchiq kirishSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20236 iqtibos

   ABIABI:AkademIndex/2023.article.001215

3. The Mechanism of the Formation of Binary Compounds Between Zn and S Impurity Atoms in Si Crystal Lattice

   Н. Ф. Зикриллаев, Maruf K. Khakkulov, B. O. Isakov

   MaqolaOAOchiq kirishSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20232 iqtibos

   ABIABI:AkademIndex/2023.article.002461

4. New Technological Solution for the Tailoring of Multilayer Silicon-based Systems with Binary Nanoclusters Involving Elements of Groups III and V

   N. F. Zikrillayev, С. Б. Исамов, B. O. Isakov +4

   MaqolaOAOchiq kirishSilicon Nanostructures and PhotoluminescenceJournal of Nano- and Electronic Physics20232 iqtibos

   ABIABI:AkademIndex/2023.article.002462

5. The Elemental Composition Investigation of Silicon Doped with Gallium and Antimony Atoms

   Х. М. Илиев, S. Koveshnikov, B. O. Isakov +3

   MaqolaSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20242 iqtibos

   ABIABI:AkademIndex/2024.article.002753

6. Геттерирующие свойства никеля в кремниевых фотоэлементах

   М.К. Бахадырханов, З.Т. Кенжаев, Х.С. Турекеев +2

   MaqolaOAOchiq kirish20212 iqtibos

   ABIABI:AkademIndex/2026.other.384837

7. Effect of GaSb Compound on Silicon Bandgap Energy

   Х. М. Илиев, Н. Ф. Зикриллаев, K. S. Ayupov +4

   MaqolaOAOchiq kirishSemiconductor materials and interfacesJournal of Nano- and Electronic Physics20241 iqtibos

   ABIABI:AkademIndex/2024.article.002963

8. The Prospects of Obtaining a New Material with a Hetero-Baric Structure Gexsi1 – x-Si Based on Silicon for Photo Energy Applications

   Habibjon Kushiev, B. O. Isakov, U. X. Mukhammadjonov

   MaqolaOAOchiq kirishMaterial Properties and ApplicationsJournal of Nano- and Electronic Physics20241 iqtibos

   ABIABI:AkademIndex/2024.article.003016

9. Electrodifusion of Manganese Atoms in Silicon

   Xalmurat M. Iliyev, Zafar B. Khudoynazarov, B. O. Isakov +2

   MaqolaOAOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20241 iqtibos

   ABIABI:AkademIndex/2024.article.003062

10. Effect of gallium and antimony impurity atoms on the photoelectric properties of silicon

    B. O. Isakov

    MaqolaOAOchiq kirish20230 iqtibos

    ABIABI:AkademIndex/2023.article.047609

11. Effective Charge of Mn and Ni Impurity Atoms in Silicon Under the Influence of An External Electric Field

    B. O. Isakov, Xalmurat M. Iliyev, Zafar B. Khudoynazarov +1

    MaqolaOAOchiq kirishSilicon and Solar Cell TechnologiesEast European Journal of Physics20250 iqtibos

    ABIABI:AkademIndex/2025.article.009031

12. The Influence of γ-Irradiation on the Electrophysical Parameters of Nickel-Doped Silicon Grown by the Czochralski Method

    Х. М. Илиев, К. А. Исмайлов, E. Zh. Kosbergenov +6

    MaqolaOAOchiq kirishSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20250 iqtibos

    ABIABI:AkademIndex/2025.article.010909