В. Б. Оджаев

5 ta ish

Belarusian State University

1. X-Ray Diffraction and Raman Spectroscopy Analyses of GaSb-Enriched Si Surface Formed by Applying Diffusion Doping Technique

   Xalmurat M. Iliyev, В. Б. Оджаев, Sobir B. Isamov +5

   MaqolaOAOchiq kirishSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20236 iqtibos

   ABIABI:AkademIndex/2023.article.001215

2. The Effect of Gamma Irradiation on the Electrophysical Parameters of Nickel-Doped Silicon Solar Cells

   Z. T. Kenzhaev, Х. М. Илиев, В. Б. Оджаев +6

   MaqolaSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20241 iqtibos

   ABIABI:AkademIndex/2024.article.002781

3. Improving the efficiency of an industrial silicon solar cell by doping with nickel

   M. K. Bakhadirkhanov, Z. T. Kenzhaev, B. K. Ismaylov +3

   MaqolaOAOchiq kirishChalcogenide Semiconductor Thin FilmsJournal of the Belarusian State University Physics20210 iqtibos

   ABIABI:AkademIndex/2021.article.009611

4. Influence of Nickel Impurity on the Operating Parameters of a Silicon Solar Cell

   Z. T. Kenzhaev, Н. Ф. Зикриллаев, В. Б. Оджаев +4

   MaqolaOAOchiq kirishSilicon and Solar Cell TechnologiesRussian Microelectronics20240 iqtibos

   ABIABI:AkademIndex/2024.article.003493

5. The Influence of γ-Irradiation on the Electrophysical Parameters of Nickel-Doped Silicon Grown by the Czochralski Method

   Х. М. Илиев, К. А. Исмайлов, E. Zh. Kosbergenov +6

   MaqolaOAOchiq kirishSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20250 iqtibos

   ABIABI:AkademIndex/2025.article.010909