Sobir B. Isamov

4 ta ish

Islom Karimov nomidagi Toshkent davlat texnika universiteti

1. A Surface Study of Si Doped Simultaneously with Ga and Sb

   X.M. Iliyev, Sobir B. Isamov, B. O. Isakov +2

   MaqolaOAOchiq kirishSemiconductor Quantum Structures and DevicesEast European Journal of Physics20237 iqtibos

   ABIABI:AkademIndex/2023.article.001190

2. X-Ray Diffraction and Raman Spectroscopy Analyses of GaSb-Enriched Si Surface Formed by Applying Diffusion Doping Technique

   Xalmurat M. Iliyev, В. Б. Оджаев, Sobir B. Isamov +5

   MaqolaOAOchiq kirishSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20236 iqtibos

   ABIABI:AkademIndex/2023.article.001215

3. The Physical mechanisms of gettering properties of nickel clusters in silicon solar cells

   Zoir Kenjayev, Khalmurat Iliev, Kanatbay A. Ismailov +4

   MaqolaOAOchiq kirishSilicon and Solar Cell TechnologiesPhysical Sciences and Technology20242 iqtibos

   ABIABI:AkademIndex/2024.article.002715

4. Multicharged and a magnetic quantum dots in silicon

   М. К. Бахадырханов, Х. М. Илиев, Sobir B. Isamov +2

   MaqolaSemiconductor Quantum Structures and Devices20100 iqtibos

   ABIABI:AkademIndex/2010.article.000523