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Xizmatlar

B. K. Ismaylov

20 ta ish

Islom Karimov nomidagi Toshkent davlat texnika universiteti

AkademScholarda batafsil koʻrsatkichlar

  1. Influence of electrically neutral nickel atoms on electrical and recombination parameters of silicon

    М. К. Бахадырханов, B. K. Ismaylov, С. А. Тачилин +2

    MaqolaOchiq kirish202012 iqtibos
    ABI

  2. Radiation Stability of Nickel Doped Solar Cells

    К. А. Исмайлов, Z. T. Kenzhaev, S. Koveshnikov +2

    MaqolaOchiq kirishSilicon and Solar Cell TechnologiesPhysics of the Solid State202210 iqtibos
    ABI

  3. Clusters of impurity nickel atoms and their migration in the crystal lattice of silicon

    B. K. Ismaylov, N. F. Zikrillayev, К. А. Исмайлов +1

    MaqolaOchiq kirishMaterial Science and ThermodynamicsPhysical Sciences and Technology20237 iqtibos
    ABI

  4. X-Ray Diffraction and Raman Spectroscopy Analyses of GaSb-Enriched Si Surface Formed by Applying Diffusion Doping Technique

    Xalmurat M. Iliyev, В. Б. Оджаев, Sobir B. Isamov +5

    MaqolaOchiq kirishSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20236 iqtibos
    ABI

  5. Formation of complexes consisting of impurity Mn atoms and group VI elements in the crystal lattice of silicon

    К. А. Исмайлов, X. M. Iliev, M. O. Tursunov +1

    Maqola20215 iqtibos
    ABI

  6. Physical mechanism of gettering of impurity Ni atom clusters in Si lattice

    B. K. Ismaylov, N. F. Zikrillayev, К. А. Исмайлов +1

    MaqolaOchiq kirish20244 iqtibos
    ABI

  7. The High-temperature analysis of silicon properties with manganese-oxygen binary complexes

    M. O. Tursunov, Khalmurat Iliev, B. K. Ismaylov

    MaqolaOchiq kirishSemiconductor materials and interfacesPhysical Sciences and Technology20243 iqtibos
    ABI

  8. The Physical mechanisms of gettering properties of nickel clusters in silicon solar cells

    Zoir Kenjayev, Khalmurat Iliev, Kanatbay A. Ismailov +4

    MaqolaOchiq kirishSilicon and Solar Cell TechnologiesPhysical Sciences and Technology20242 iqtibos
    ABI

  9. The Effect of Gamma Irradiation on the Electrophysical Parameters of Nickel-Doped Silicon Solar Cells

    Z. T. Kenzhaev, Х. М. Илиев, В. Б. Оджаев +6

    MaqolaSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20241 iqtibos
    ABI

  10. Improving the efficiency of an industrial silicon solar cell by doping with nickel

    M. K. Bakhadirkhanov, Z. T. Kenzhaev, B. K. Ismaylov +3

    MaqolaOchiq kirishChalcogenide Semiconductor Thin FilmsJournal of the Belarusian State University Physics20210 iqtibos
    ABI

  11. Erratum to: Composition of Silicon Alloyed with Gallium and Phosphorus Atoms

    Н. Ф. Зикриллаев, S. Koveshnikov, Kh. S. Turekeev +1

    BoshqaOchiq kirishSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20240 iqtibos
    ABI

  12. INDENTATION OF NEGATIVE PHOTORESIST FILMS FOR LIFT-OFF LITHOGRAPHY

    С. А. Вабищевич, Д. И. Бринкевич, В. С. Просолович +4

    MaqolaOchiq kirishMetal and Thin Film MechanicsHERALD OF POLOTSK STATE UNIVERSITY Series С FUNDAMENTAL SCIENCES20250 iqtibos
    ABI

  13. Ferromagnetic Properties of Silicon Doped Manganese Atoms

    Н. Ф. Зикриллаев, S. Koveshnikov, Levent Trabzon +4

    MaqolaZnO doping and propertiesSurface Engineering and Applied Electrochemistry20250 iqtibos
    ABI

  14. Investigation of the Influence of Nickel on the Behavior of Thermal Donors in Silicon

    B. K. Ismaylov, N. F. Zikrillayev, Kanatbay A. Ismailov +2

    MaqolaOchiq kirishSilicon and Solar Cell TechnologiesEast European Journal of Physics20250 iqtibos
    ABI

  15. Thermal stability parameters of silicon doped with nickel impurity atoms

    B. K. Ismaylov, Kanatbay A. Ismailov, Paraxat Dlimbetov +2

    MaqolaThermal properties of materialsAIP conference proceedings20250 iqtibos
    ABI

  16. P-I-N PHOTODIODES WITH GETTERS CREATED BY ION IMPLANTATION OF MAIN DOPING IMPURITIES

    V.B. Odzhaev, A. N. Pyatlitski, V. S. Prasalovich +6

    MaqolaOchiq kirishSilicon and Solar Cell TechnologiesHERALD OF POLOTSK STATE UNIVERSITY Series С FUNDAMENTAL SCIENCES20250 iqtibos
    ABI

  17. Effect of Nickel Diffusion on Trap States and Interface Quality in Polycrystalline Silicon Structures

    Kanatbay A. Ismailov, B. K. Ismaylov, N. F. Zikrillayev +3

    MaqolaOchiq kirishSilicon and Solar Cell TechnologiesEast European Journal of Physics20250 iqtibos
    ABI

  18. Optical and Magnetic Properties of Silicon with Binary GexSi1 – x Nanocompounds

    Н. Ф. Зикриллаев, Г. Х. Мавлонов, F. E. Urakova +4

    MaqolaOchiq kirish20250 iqtibos
    ABI

  19. Effect of inter-impurity interaction on concentration of electroactive manganese impurity atoms in silicon

    N. F. Zikrillayev, К. А. Исмайлов, С. Б. Исамов +4

    MaqolaOchiq kirish20260 iqtibos
    ABI

  20. Suppression of thermal donors in silicon by nickel impurity atoms

    B. K. Ismaylov, Nurullo Zikrillaev, Katarzyna Znajdek +5

    MaqolaOchiq kirish20260 iqtibos
    ABI