Suppression of thermal donors in silicon by nickel impurity atoms
B. K. IsmaylovKarakalpak State UniversityNurullo ZikrillaevDepartment of Digital Electronics and Microelectronics, Tashkent State Technical University, 2 Universitetskaya St., Tashkent 100095, UzbekistanKatarzyna ZnajdekDepartment of Semiconductor and Optoelectronic Devices, Lodz University of Technology (TUL), Al. Politechniki 8, 93-590 Lodz, PolandKanatbay A. IsmailovDepartment of Semiconductor Physics, Karakalpak State University, Nukus, Karakalpakstan, 1 Charjou Abdirov St., Nukus 230100, UzbekistanJanusz WoźnyDepartment of Semiconductor and Optoelectronic Devices, Lodz University of Technology (TUL), Al. Politechniki 8, 93-590 Lodz, PolandAndrzej KubiakDepartment of Semiconductor and Optoelectronic Devices, Lodz University of Technology (TUL), Al. Politechniki 8, 93-590 Lodz, PolandZoir KenjayevDepartment of Semiconductor Physics, Karakalpak State University, Nukus, Karakalpakstan, 1 Charjou Abdirov St., Nukus 230100, Uzbekistan; Department of Digital Electronics and Microelectronics, Tashkent State Technical University, 2 Universitetskaya St., Tashkent 100095, UzbekistanAlloberdi K. SaparovDepartment of Semiconductor Physics, Karakalpak State University, Nukus, Karakalpakstan, 1 Charjou Abdirov St., Nukus 230100, Uzbekistan
2026en
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The article shows that doping silicon with nickel in the temperature range of T = 1000–1250 °C makes it possible to almost completely suppress the generation of thermal donors during thermal annealing in the temperature range of T = 100–700 °C. It has been established that impurity nickel atoms form clusters and precipitates in silicon that absorb oxygen atoms. A method for producing silicon with stable electrophysical parameters has been proposed. The proposed method for gettering uncontrolled impurity atoms can be used in various electronic production. This makes it possible to obtain a silicon material with stable doping parameters containing nickel impurity atoms.
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