Zafar B. Khudoynazarov

3 ta ish

Islom Karimov nomidagi Toshkent davlat texnika universiteti

1. The Elemental Composition Investigation of Silicon Doped with Gallium and Antimony Atoms

   Х. М. Илиев, S. Koveshnikov, B. O. Isakov +3

   MaqolaSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20242 iqtibos

   ABIABI:AkademIndex/2024.article.002753

2. Electrodifusion of Manganese Atoms in Silicon

   Xalmurat M. Iliyev, Zafar B. Khudoynazarov, B. O. Isakov +2

   MaqolaOAOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20241 iqtibos

   ABIABI:AkademIndex/2024.article.003062

3. Effective Charge of Mn and Ni Impurity Atoms in Silicon Under the Influence of An External Electric Field

   B. O. Isakov, Xalmurat M. Iliyev, Zafar B. Khudoynazarov +1

   MaqolaOAOchiq kirishSilicon and Solar Cell TechnologiesEast European Journal of Physics20250 iqtibos

   ABIABI:AkademIndex/2025.article.009031