Effect of Uniaxial Compression on Excitation Conditions and Parameters of Low-Frequency Auto-Oscillations of Current in Compensated Silicon

In compensated silicon doped with impurity atoms creating deep energy levels in the band gap of the material, a number of interesting physical phenomena have been found that are not only of scientific interest but also have great practical significance.One of them is low-frequency auto-oscillations of current, which are excited in certain conditions In this paper we consider the influence of the uniaxial elastic com-pression on the parameters of current auto-oscillations.The research was carried out in silicon samples doped with impurity manganese atoms with crystallographic directions 111, 110 and 100.It has been found that the character of change of excitation conditions and parameters of auto-oscillations depend on the crystalline directions.Unusual change in the threshold electric field strength (Еth) and parameters (amplitude, frequency) of current auto-oscillations in compensated silicon samples with crystallographic direction 100.The physical mechanism of parameter changes and the conditions of excitation of current auto-oscillations are explained with the change in the population of the deep energy level by doubly ionized manganese atoms.From the analysis of the obtained results and according to theoretical concepts, the physical mechanism of the change of parameters and conditions of excitation of current auto-oscillations under the influence of uniaxial elastic compression is explained.

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