G. A. Kushiev

10 ta ish

Islom Karimov nomidagi Toshkent davlat texnika universiteti

1. Current Status of Silicon Studies with GexSi1-x Binary Compounds and Possibilities of Their Applications in Electronics

   Н. Ф. Зикриллаев, G. A. Kushiev, Sergey V. Koveshnikov +3

   MaqolaOAOchiq kirishSemiconductor materials and interfacesEast European Journal of Physics20238 iqtibos

   ABIABI:AkademIndex/2026.other.258448

2. Development and Creation of a New Class of Graded-Gap Structures Based on Silicon with the Participation of Zn and Se Atoms

   Н. Ф. Зикриллаев, O. B. Tursunov, G. A. Kushiev

   MaqolaSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20235 iqtibos

   ABIABI:AkademIndex/2023.article.001403

3. The Elemental Composition Investigation of Silicon Doped with Gallium and Antimony Atoms

   Х. М. Илиев, S. Koveshnikov, B. O. Isakov +3

   MaqolaSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20242 iqtibos

   ABIABI:AkademIndex/2024.article.002753

4. Silicon with Binary GexSi1 – x Compounds

   Н. Ф. Зикриллаев, K. S. Ayupov, N. Narkulov +3

   MaqolaSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20241 iqtibos

   ABIABI:AkademIndex/2024.article.002219

5. Кремний с бинарными соединениями GexSi1-x

   Zikrillaev N.F., K. S. Ayupov, N. Narkulov +3

   MaqolaOAOchiq kirish20240 iqtibos

   ABIABI:AkademIndex/2024.article.038899

6. Фотоэлементы на основе кремния с бинарными соединениями GexSi1-x

   Zikrillaev N.F., Kh. F. Zikrillaev, F. E. Urakova +4

   MaqolaOAOchiq kirish20240 iqtibos

   ABIABI:AkademIndex/2024.article.041886

7. Physical and Magnetic Properties of Silicon Doped with Impurity Germanium Atoms

   N. F. Zikrillayev, F. E. Urakova, A. Toshev +4

   MaqolaOAOchiq kirishSemiconductor materials and interfacesEast European Journal of Physics20250 iqtibos

   ABIABI:AkademIndex/2025.article.003073

8. The Influence of γ-Irradiation on the Electrophysical Parameters of Nickel-Doped Silicon Grown by the Czochralski Method

   Х. М. Илиев, К. А. Исмайлов, E. Zh. Kosbergenov +6

   MaqolaOAOchiq kirishSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20250 iqtibos

   ABIABI:AkademIndex/2025.article.010909

9. X-Ray and Raman Spectroscopy of (Si2)1 – x(BP)x Binary Compounds in Silicon

   G. H. Mavlonov, Н. Ф. Зикриллаев, A. A. Usmonov +2

   MaqolaOAOchiq kirish20250 iqtibos

   ABIABI:AkademIndex/2025.article.030347

10. Effect of Uniaxial Compression on Excitation Conditions and Parameters of Low-Frequency Auto-Oscillations of Current in Compensated Silicon

    N. F. Zikrillayev, Abdujalol Abdukhamidovich Sattorov, Hayrulla Zikrillaev +6

    MaqolaOAOchiq kirish20250 iqtibos

    ABIABI:AkademIndex/2025.article.068258