O. B. Tursunov

1 ta ish

Islom Karimov nomidagi Toshkent davlat texnika universiteti

1. Development and Creation of a New Class of Graded-Gap Structures Based on Silicon with the Participation of Zn and Se Atoms

   Н. Ф. Зикриллаев, O. B. Tursunov, G. A. Kushiev

   MaqolaSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20235 iqtibos

   ABIABI:AkademIndex/2023.article.001403