R.M. Turmanova

4 ta ish

Oʻzbekiston Milliy Universiteti

1. The Effect of Thermal Annealing on the Electrophysical Properties of Samples n-Si<Ni,Сu>

   N. A. Turgunov, Elmurod Kh. Berkinov, R.M. Turmanova

   MaqolaOAOchiq kirishSilicon and Solar Cell TechnologiesEast European Journal of Physics20239 iqtibos

   ABIABI:AkademIndex/2026.other.279528

2. INFLUENCE OF IMPURITY NI AND CU ATOMS ON THE ELECTROPHYSICAL PROPERTIES OF SI

   N. A. Turgunov, E.Kh. Berkinov, R.M. Turmanova

   MaqolaOAOchiq kirishSilicon and Solar Cell TechnologiesAmerican Journal Of Applied Science And Technology20231 iqtibos

   ABIABI:AkademIndex/2026.other.585531

3. Formation of Impurity Accumulations in Silicon Doped with Nickel and Copper

   S.Z. Zainabidinov, Sh. Akbarov, N. A. Turgunov +2

   MaqolaOAOchiq kirishSilicon and Solar Cell TechnologiesE3S Web of Conferences20250 iqtibos

   ABIABI:AkademIndex/2025.article.005652

4. Effect of Impurity Clusters on Optical Properties of Nickel and Copper Doped Single-Crystal Silicon

   S. Z. Zainabidinov, N.A. Turgunov, Akramjon Y. Boboev +6

   MaqolaOAOchiq kirishSilicon and Solar Cell TechnologiesEast European Journal of Physics20260 iqtibos

   ABIABI:AkademIndex/2026.article.011338