M. Kenjaeva

1 ta ish

Islom Karimov nomidagi Toshkent davlat texnika universiteti

1. Changes in the electronic structure of the Si surface as a result of ion implantation

   S. B. Donaev, Umida Ziyamukhamedova, M. Kenjaeva +3

   MaqolaOAOchiq kirishIon-surface interactions and analysisE3S Web of Conferences20234 iqtibos

   ABIABI:AkademIndex/2026.other.144489