Ravshanbek Ergashev

4 ta ish

Farg`ona davlat universiteti

1. Efficient effect of deep levels on the photoelectric properties of a heterostructure based on p CdTe – n CdS and p CdTe – n CdSe

   Salim Otajonov, Ravshanbek Ergashev, Sharof Shuxratov +3

   MaqolaChalcogenide Semiconductor Thin FilmsAIP conference proceedings20243 iqtibos

   ABIABI:AkademIndex/2024.article.002824

2. Creation of an optical sensor based on the pCdTe – nCdS and pCdTe – nCdSe heterostructure for detecting polluted air

   Salim Otajonov, Ravshanbek Ergashev, Zokir Xaydarov +4

   MaqolaOAOchiq kirishAdvanced Semiconductor Detectors and MaterialsE3S Web of Conferences20240 iqtibos

   ABIABI:AkademIndex/2024.article.008521

3. Study of photodetectors in optical sensors based on wide-bandgap heterostructures pCdTe-nCdS and pCdTe-nCdSe

   Salim Otajonov, Ravshanbek Ergashev, Zokir Xaydarov +4

   MaqolaOAOchiq kirishAdvanced Semiconductor Detectors and MaterialsAIP conference proceedings20250 iqtibos

   ABIABI:AkademIndex/2025.article.007409

4. Current Flow Mechanisms and Photoelectric Properties of Solar Cells Based on p-CdTe-n-CdS and p-CdTe-n-CdSe Heterostructures with Deep Impurity Levels

   Salim Otajonov, Ravshanbek Ergashev, Qodir Botirov

   MaqolaOAOchiq kirishChalcogenide Semiconductor Thin FilmsE3S Web of Conferences20250 iqtibos

   ABIABI:AkademIndex/2025.article.008281