Kh.E. Abdiev

2 ta ish

Islom Karimov nomidagi Toshkent davlat texnika universiteti

1. Analysis of the Influence of Formation of Pd Silicides on Surface Layers of Si on the Diffusion of Atoms of Contacting Metal

   Д. А. Ташмухамедова, Kh.E. Abdiev, Soadat Gulyamova +2

   MaqolaOAOchiq kirishSemiconductor materials and interfacesEast European Journal of Physics20240 iqtibos

   ABIABI:AkademIndex/2024.article.008698

2. Mechanism of Change in The Emission and Optical Properties of W and Mo After Bombardment with Low-Energy Ions

   Д. А. Ташмухамедова, Б. Е. Умирзаков, Y. S. Ergashov +2

   MaqolaOAOchiq kirish20240 iqtibos

   ABIABI:AkademIndex/2024.article.018788