Binghuang Duan

1 ta ish

China Academy of Engineering Physics

1. Electronic properties of ionizing radiation-induced defects at SiO$$_2$$/Si interface associated with non-trivial excess current splitting

   Binghuang Duan, Cen Xiong, Hang Zhou +5

   Maqola20242 iqtibos

   ABIABI:AkademIndex/2026.other.096774