V. P. Tolstoluzhskii

3 ta ish

Physicotechnical Institute of Low Temperature, Academy of Sciences of the Ukrainian SSR

1. Low-temperature heat capacity of fcc lattice containing substitutional impurities

   V. I. Peresada, V. P. Tolstoluzhskii

   MaqolaIntermetallics and Advanced Alloy PropertiesSoviet Journal of Low Temperature Physics19770 iqtibos

   ABIABI:AkademIndex/openalex/1977.article.000045

2. One possibility of determining the parameters of the substitutional impurity model from low-temperature data

   V. P. Tolstoluzhskii

   MaqolaSemiconductor materials and interfacesSoviet Journal of Low Temperature Physics19780 iqtibos

   ABIABI:AkademIndex/openalex/1978.article.000060

3. Concentration dependence of the vibrational characteristics of a crystal with substitutional impurities

   V. P. Tolstoluzhskii, E. S. Syrkin, V. I. Peresada

   MaqolaOptical and Acousto-Optic TechnologiesSoviet Journal of Low Temperature Physics19820 iqtibos

   ABIABI:AkademIndex/openalex/1982.article.000158