L. N. Aeksandrov

1 ta ish

Institute of Physics of Semiconductors, Siberian Department of Academy of Sciences of the USSR

1. The Mechanism of Silicon Epitaxial Layer Growth from Ion-Molecular Beams

   L. N. Aeksandrov, A. S. Ltovich, E. D. Blorusets

   MaqolaAdvanced Materials Characterization Techniquesphysica status solidi (a)19792 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.605778