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V. V. Rubinov

7 ta ish

S. T. Starodubtsev Physico-Technical Institute, Academy of Sciences of the Uzbeki SSR, Tashkent

  1. Exclusion Effect in Semiconductors with Non-Injecting Contacts

    D. A. Aronov, P. I. Knigin, Yu. S. Korolev +1

    MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19847 iqtibos
    ABI

  2. On the theory of carrier exclusion in “pure” intrinsic semiconductors

    D. A. Aronov, R. Mamatkulov, V. V. Rubinov

    MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19815 iqtibos
    ABI

  3. The Effects of Field and Temperature Heating in Intrinsic Semiconductors with Non-Injecting Contacts

    D. A. Aronov, R. Mamatkulov, V. V. Rubinov

    MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19822 iqtibos
    ABI

  4. The criteria of diffusionless solution validity in the theory of exclusion in “super-pure” semiconductors

    D. A. Aronov, R. Mamatkulov, V. V. Rubinov

    MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19851 iqtibos
    ABI

  5. The Influence of Exclusion on Light Absorption by Free Carriers in “Pure” (almost Intrinsic) Semiconductors with Non-Injecting Contacts

    D. A. Aronov, V. V. Rubinov

    MaqolaSilicon Nanostructures and Photoluminescencephysica status solidi (a)19821 iqtibos
    ABI

  6. On the Minimum Coefficient of Light Absorption by Free Carriers under the Conditions of Exclusion in “Pure” Semiconductors with Non-Injecting Contacts

    D. A. Aronov, V. V. Rubinov

    MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19830 iqtibos
    ABI

  7. Use of the strong exclusion effect in ionizing radiationdetectors based on “pure” semiconductors with non-injecting contacts

    D. A. Aronov, B. N. Zaveryukhin, Р. А. Муминов +2

    MaqolaAdvanced Semiconductor Detectors and Materialsphysica status solidi (a)19860 iqtibos
    ABI