B. R. Mamatkulov

5 ta ish

V. I. Lenin State University, Tashkent

1. The Enhancement of Exclusion Effect in Compensated Semiconductors under the Action of Impurity Illumination Generating Minority Current Carriers

   D. A. Abonov, P. I. Knigin, B. R. Mamatkulov

   MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19852 iqtibos

   ABIABI:AkademIndex/openalex/1985.article.000058

2. The Field and Spectrum Dependences of Impurity Photoconductivity with Exclusion in Compensated Semiconductors

   D. A. Aronov, B. R. Mamatkulov

   MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19861 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.658872

3. The Capacitance and Characteristic Relaxation Times at Carrier Exclusion in Compensated Semiconductors with Deep Traps and Non-Injecting Contacts

   D. A. Aronov, B. R. Mamatkulov

   MaqolaAdvanced Research in Systems and Signal Processingphysica status solidi (a)19840 iqtibos

   ABIABI:AkademIndex/openalex/1984.article.000068

4. The Influence of Field-Induced Variation in Majority Carrier Lifetime Caused by Photostimulated Heating on Impurity Photoconductivity of Compensated Semiconductors with Exclusion

   D. A. Aronov, B. R. Mamatkulov

   MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19870 iqtibos

   ABIABI:AkademIndex/openalex/1987.article.000080

5. The influence of diffusion on the carrier exclusion effect in high-purity (intrinsic) semiconductors with non-injecting contacts

   D. A. Aronov, B. R. Mamatkulov, R. Mamatkulov

   MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19890 iqtibos

   ABIABI:AkademIndex/openalex/1989.article.000127