V. N. Ryazanov

1 ta ish

Kuznetsov Siberian Physicotechnical Institute at Tomsk State University, Tomsk

1. Doping mechanisms of gallium arsenide with tin in gas phase epitaxy processes

   I. A. Bobrovnikova, M. D. Vilisova, L. P. Porokhovnichenko +2

   MaqolaSemiconductor materials and interfacesRussian Physics Journal19900 iqtibos

   ABIABI:AkademIndex/openalex/1990.article.000080