L. P. Porokhovnichenko

2 ta ish

Kuznetsov Siberian Physicotechnical Institute at Tomsk State University, Tomsk

1. Doping mechanisms of gallium arsenide with tin in gas phase epitaxy processes

   I. A. Bobrovnikova, M. D. Vilisova, L. P. Porokhovnichenko +2

   MaqolaSemiconductor materials and interfacesRussian Physics Journal19900 iqtibos

   ABIABI:AkademIndex/openalex/1990.article.000080

2. Role of the substrate in the formation of structure defects representing step retardation sites during vapor phase epitaxy of gallium arsenide

   И. В. Ивонин, N. N. Krivolapov, L. G. Lavrent’eva +1

   MaqolaSemiconductor materials and interfacesRussian Physics Journal19920 iqtibos

   ABIABI:AkademIndex/openalex/1992.article.000151